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“chemical vapor deposition”造句,怎麼用chemical vapor deposition造句

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laser induction chemical vapor deposition method

Principle and research development of powder materials prepared by chemical vapor deposition

Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition

Synthesis of mesoporous nitrogen-doped carbon nanoparticles by detonation-assisted chemical vapor deposition

Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.

Electro-catalytic behavior of boron-doped diamond films electrode prepared using hot filament chemical vapor deposition method

The article has introduced the application and development tendency of techniques of film making with chemical vapor deposition in all fields.

Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow.

When chemical vapor deposition is used to grow graphene it is normally made up of individually grown sheets that bloom in the outward direction from hot catalysts until they meet each other.

chemical vapor deposition造句

plasma chemical vapor deposition

metallo organic chemical vapor deposition

photochemical vapor deposition oxide

The basic principles, deposition systems and laser sources of pulsed laser evaporation deposition (PLED) and laser-induced chemical vapor deposition (LCVD) are simply introduce.

Influence of Cu-induced layer on microstructure of poly-Si films deposited by hot-wire chemical vapor deposition

This symmetric growth mode is induced by the shape changes in copper nanocrystals during catalyzing the chemical vapor deposition of acetylene.

modified chemical vapor deposition

Structural changes in carbon produced by a sulfur-aided catalytic chemical vapor deposition

Synthesis of high purity multi-walled carbon nanotubes over Co-Mo/MgO catalyst by the catalytic chemical vapor deposition of methane

Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).

chemical vapor deposition reactor

The triangular pits eliminate of (110) a-plane GaN growth by metal-orgamic chemical vapor deposition