“LDMOS”造句，怎麼用LDMOS造句

Research and Design of High Voltage RESURF-LDMOS;

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.

The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

對於隔離的LDMOS器件，橫向隔離壁(32)(結合至源極)與埋層(24)之間的電阻減少，從而減少了襯底注入電流。

Integrated high voltage LDMOS on SIMOX Wafer

Research on Reliability and Temperature Characteristic of LDMOS;

The Research of LDMOS Microwave Wideband Power Amplifier in L-Band

For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.

二百該模型考慮了載流子的速度飽和現象和寄生雙極*電晶體的影響，獲得了開態下LDMOS漂移區中的電場分佈。

Analytical Models of LDMOS Based on Numerical Simulation;

LDMOS電流特*的研究涉及了器件電流線*區、夾斷飽和區和準飽和區，並給出了簡化的電流特*解析表示式。

採用tone負載牽引法得到了LDMOS電晶體MRF輸入和輸出阻抗

Breakdown Voltage and ESD Protection of RF-LDMOS;