“LDMOS”造句，怎么用LDMOS造句

Research and Design of High Voltage RESURF-LDMOS;

Extraction of the LDMOS Transistor's Shunt Capacitance and Design of Class-E Power Amplifiers

The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.

The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

对于隔离的LDMOS器件，横向隔离壁(32)(结合至源极)与埋层(24)之间的电阻减少，从而减少了衬底注入电流。

Integrated high voltage LDMOS on SIMOX Wafer

Research on Reliability and Temperature Characteristic of LDMOS;

The Research of LDMOS Microwave Wideband Power Amplifier in L-Band

For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.

二百该模型考虑了载流子的速度饱和现象和寄生双极*晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。

Analytical Models of LDMOS Based on Numerical Simulation;

LDMOS电流特*的研究涉及了器件电流线*区、夹断饱和区和准饱和区，并给出了简化的电流特*解析表达式。

采用tone负载牵引法得到了LDMOS晶体管MRF输入和输出阻抗

Breakdown Voltage and ESD Protection of RF-LDMOS;